【摘要】 用Pb(CH3COO)2·3H2O、Sc(CH3COO)3·xH2O和C10H25O.5Ta为原材料,乙二醇甲醚为溶剂,用改进的溶胶-凝胶(Sol-Gel)法在Pt/Ti/SO2/Si基片上成功地制备出ABO3钙钛矿型结构Pb(Sc1/2Ta1/2)O3(PST)铁电薄膜。该薄膜是研制铁电微型致冷器和非致冷热释电红外焦平面阵列的优选材料。对制备出的PST薄膜进行了介电、铁电和热释电性能测试。测试得到在1kHz下PST薄膜的介电常数为570,介电损耗为0.02。铁电性能良好,剩余板化强度为3.8～6.0μC·cm-2,矫顽场为40～45kV·cm-1。热释电系数为4.0×10-4～20×10-4Cm-2K-1。更多还原

【Abstract】 Pb(Sc_1/2Ta_1/2)O₃（PST）ferroelectric thin films with ABO₃ perovskite structure on Pt/Ti/SiO₂/Si substrate have been prepared by improved Sol-Gel process. Pb（CH₃COO）₂·3H₂O, Sc（CH₃COO）₃·xH₂O and C₁₀H₂₅O₅Ta are used as raw materials. CH₃OCH₂CH₂OH is used as solvent. PST thin films are excellent materials for preparing ferroelectric miniature refrigerator and uncooled pyroelectric infrared focal plane arrays.The dielectric, pyroelectric and ferroelectric properties of PST thin tilms were measured. The ε_r and tan θ of PST thin films are 570 and 0.02, respectively. The P_r and Ec of PST thin films are 3.8～6.0 μCcm^-2 and 40～45 kVcm^-1, respectively, The pyroelectric coefficient of PST thin films are 4.0×10^-4～ 20×10^-4 Cm^-2K^-1.更多还原