【摘要】 采用直流磁控反应溅射法,在Si(100)和Pt/Ti/Si(100)上制备了AlN薄膜。用X-射线衍射(XRD)、电镜扫描(SEM)、原子力显微(AFM)对薄膜的晶向结构和表面形貌进行了分析,研究了不同工艺参数对薄膜择优取向的影响,分析了AlN晶粒生长的有关机理。制备出的AlN薄膜显示出较好的(002)面择优取向性,半高宽(FWHM)为0.35°～0.40°,折射率约为2.07。更多还原

【Abstract】 Aluminum nitride (AlN) thin films have been successfully deposited on Si(100) and Pt/Ti/Si(100) by DC magnetron reactive sputtering. X-ray diffraction (XRD), scanning electron microscopy (SEM) and atomic force microscopy (AFM) are used to analyze crystalline orientation and surface morphology of the films. The influence of different technical factors to the film preferential orientation is investigated. The growth mechanism of AlN crystallites is also discussed. These films show a preferred orientation of (002) with a full width at half maximum (FWHM) of 0.35°～0.4°and a refractive index of 2.07.更多还原