【摘要】 本文用XPS分析紫外光激发氧化反应后砷化镓表面的化学组成和氧化层厚度。发现,紫外光激发下,GaAs表面生成氧化膜,同时清除表面污染碳。氧化膜中的镓砷比可以与基体完全保持一致。用此方法获得具有一定的化学稳定性的,适合于器件制备的钝化层。发现紫外光激发的砷化镓表面氧化反应的实质是光催化反应。用“紫外光/臭氧处理法”处理的GaAs晶片,可使器件性能得到改善更多还原

【Abstract】 The oxidation process of GaAs surface were quantitatively investigated using XPS The result shows that the oxide layer was grown on GaAs surface, the polluted carbon was removed after UV/ozone treated The oxide on GaAs surface is made up of Ga 2O 3 and As 2O 3 and the Ga /As atomic ratio close to unity after UV/ozone exposing within 30 minute The thickness of oxide layer can be controlled by the exposing time An effective passivation layer on GaAs was obtained by this method更多还原