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磁控溅射沉积氮化铝薄膜中等离子体光谱研究
Plasma emission spectra in process of AlN thin films deposition by reactive magnetron sputtering
【摘要】 薄膜材料由于其优异的性能,应用日益广泛.薄膜生长过程的在线检测具有重要意义.为了研究等离子体发射光谱强度与气体流量的关系,对薄膜生长过程进行在线检测;应用等离子体发射监测仪(Plasma Emission Monitor)采集反应磁控溅射真空室中等离子体的发射光谱.对氮化铝薄膜沉积过程中等离子体发射光谱进行分析,结果显示氮的谱线强度和铝的谱线强度随着氮气流量的增大都有明显而且相同的转变点.通过理论模拟分析,得出以下结论:反应粒子光谱强度的转变反映了溅射模式转变点,并且通过直线拟合的方法找到转变点.实验结果与理论模拟分析取得了一致结果.
【Abstract】 Thin films find increasing wide technological uses in many fields in virtue of their excellent performances.Synchronous monitoring is significant and challenging in the process of thin films deposition.In order to investigate the relationship between plasma emission spectra intensities and flux of reactive gas,the authors acquired the plasma emission spectra in the vacuum system of reactive magnetron sputtering by Plasma Emission Monitor to synchronously monitor the process of thin films deposition.In this article,the plasma emission spectra in the process of the aluminum nitride films deposition were analyzed.The result revealed there were obvious and equal transitions on the relationship between Al and N spectra intensities and flux of reactive gas.According to both experimental results and theoretic analysis,plasma emission spectra intensities of the reactive particles reflected the transformation of metal sputtering and nonmetal sputtering,and the critical value of gas flux in the transformation was acquired.
【Key words】 reactive magnetron sputtering; plasma emission spectra; aluminum nitride film; critical value;
- 【文献出处】 西安工业学院学报 ,Journal of Xi’An Institute of Technology , 编辑部邮箱 ,2005年06期
- 【分类号】TB383.2
- 【被引频次】2
- 【下载频次】209