【摘要】 研究了光辅助电化学刻蚀技术,并特别研究了阵列和硅衬底之间的边缘效应。在阵列边缘由于电流分布不均匀以及空穴从孔的侧壁注入,因此可以在边缘区域观察到结构的坍塌,采用一个周期性变化的信号来调制光照的强度,边缘效应会得到一定的抑制。同时,也观察到了硅的电化学深刻蚀工艺中大电流情况下的抛光现象(阳极氧化条件下,硅表面在氢氟酸溶液中快速均匀溶解不形成孔的现象)。光学测试表明,制作的正方格子结构具有光子晶体行为,其光学禁带位于6μm附近。更多还原

【Abstract】 Photo-assisted electrochemical etching is investigated,especially for the case called the boundary effect between the array and silicon substrate.The structure collapse is observed in the boundary area,which is due to the inhomogeneous current distribution and the vacancy injection from the sidewall of the hole.Such an effect can be inhibited when the illumination intensity is modulated with a poriodic signal.The electrochemical polish effect in case of high etching current is also observed.It has been demonstrated that the obtained square grid structure shows the typical behavior as the photon crystal with its forbidden band near 6 μm.更多还原