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叠层光刻胶牺牲层工艺研究
Research of Terrace Photoresist Sacrificial Layer Technology
【摘要】 通过溅射电镀种子层前预烘胶与严格控制烘胶温度变化速率、用KOH稀溶液去胶、再用稀腐蚀体系加以轻度超声干涉去除电镀种子层和使用丙酮与F117进行应力释放等方法改进工艺后,解决了在叠层光刻胶牺牲层工艺中极易出现的烘胶龟裂、光刻胶不容易去除干净、去除电镀种子层时产生絮状物和悬空结构释放时易黏附等问题。运用叠层光刻胶牺牲层改进工艺可以制备出长4 mm,悬空高度20μm,平面误差不超过3μm的悬空结构。
【Abstract】 There are some problems in terrace photoresist sacrificial layer technology: photoresist chaps during baking,photoresist residue during removing,floc during the removing of the electroplated seed layer and the structure adhesion to the base during its releasing and so on.To solve them,we pre-bake the photoresist before sputtering the seed layer and strickly control the baking temperature change rate use diluent KOH solution to remove the photoresist,use diluent etch system and gentle ultrasonic interference to remove the seed layer and use acetone and F117 to release stress.Employing the new technologies,we can fabricate perfect flat suspending structure with length of 4 mm,air gap’s height of 20 μm and plane error within 3 μm.
- 【文献出处】 微细加工技术 ,Microfabrication Technology , 编辑部邮箱 ,2005年03期
- 【分类号】TN305.7
- 【被引频次】15
- 【下载频次】402