节点文献
斜拉梁结构的RF-MEMS开关制作研究
Fabrication of RF-MEMS Switch with Slanting Beams
【摘要】 介绍了一种新型斜拉梁结构的电容耦合式开关的制作。该开关的上电极采用斜拉梁支撑结构以提高上电极的平整性和开关整体的可靠性,通过优化开关的结构,将开关的谐振点频率降低到20 GHz附近。制作过程中将平面工艺和垂直喷镀工艺相结合,获得了较厚的共面波导传输线。开关的驱动电压为20 V,在20 GHz下,“开”态插入损耗为1.03 dB,“关”态隔离度为26.5 dB。
【Abstract】 A novel capacitive RF-MEMS switch with slanting beams is fabricated and tested.The upper electrode of the switch is suspended by four slanting beams,which protect the membrane buckling and improve the reliability of the switch.Through the structure optimization,the resonant frequency of the switch is trimmed to about 20 GHz.A vertical spurted plating technique is introduced into the normal planar process to realize the thick metallic layer as the co-planar wave-(guide) transmission line.The actuating voltage of obtained switch is 20 V,its ON-state insertion loss is 1.03 dB and OFF-state isolation is 26.5dB at 20 GHz.
- 【文献出处】 微细加工技术 ,Microfabrication Technology , 编辑部邮箱 ,2005年03期
- 【分类号】TM564;
- 【被引频次】3
- 【下载频次】174