【摘要】 采用负偏压增强热丝化学气相沉积(CVD)方法,在沉积有NiFe催化剂层及Ta或Ti过渡层的Si衬底上,通过改变沉积条件制备出不同结构的碳纳米管。扫描电子显微镜的研究结果表明,当过渡层为Ta时,碳纳米管的生长速度比Ti过渡层的大;在沉积过程中,有或无辉光放电时,生长出的碳纳米管分别是定向和弯曲的;同时还观察到随着反应气体中NH3浓度的加大,碳纳米管的生长速度会随之增大。更多还原

【Abstract】 Carbon nanotubes with different structures were prepared on silicon substrates deposited with catalyst NiFe layer and Ta or Ti buffer by a negative bias-enhanced hot filament chemical vapor deposition through changing growth conditions. The results of scanning electron microscopy indicate that the growth speed of the carbon nanotubes is faster when the buffer is Ta layer than one when buffer is Ti layer and the carbon nanotubes are orientated and bending growth with and without glow discharge in the process of growing them, respectively. Simultaneously, it is observed that the growth speed of carbon nanotubes is enhanced by increasing NH₃ concentration in the reaction gases.更多还原