【摘要】 研究了离轴照明对65nm分辨率ArF浸没式光刻的影响。在3/4环形照明和3/4四极照明方式下,研究65nm线宽的密集线条、半密集线条、孤立线条在较大曝光系统参数范围内的光刻性能,并对不同照明方式的光刻性能进行了比较。结果表明,在可用焦深(depthoffocus,DOF)范围内,满足光刻性能要求可以有较大范围的曝光系统参数配置。离轴照明的焦深比传统照明提高100%～150%,采用四极照明对孤立线条进行曝光,可以获得更好的光刻性能。更多还原

【Abstract】 The effect of off-axis illumination for ArF immersion lithography is studied at 65 nm node.Under 3/4 annular and 3/4 quasar illumination,the lithographic performances for dense lines,semi-dense lines and isolated lines in different parameters of the exposure system are studied and the lithographic performances in different illumination modes are compared.The results show that in order to reach the required lithographic performance the system settings could be chosen widely for the acceptabe DOF.The DOF due to off-axis illumination increases by 100%～150%,compared to conventional illumination.The better performances are obtained for the isolated lines under the quasar illumination.更多还原