【摘要】 对溅射沉积制成的氧化锡薄膜进行了钨离子注入、氧离子注入和退火处理,并用X射线衍射(XRD)和X射线光电子能谱(XPS)分析了薄膜,研究了注入对薄膜相变的影响。发现在室温下溅射沉积形成的非晶态SnO2薄膜,注入氧离子后导致了非晶态SnO2向晶态SnO2的转变;注入钨离子则导致了SnO在非晶态薄膜中的形成。而在已经注入了钨离子的薄膜中再注入氧离子可以形成Sn3O4。实验表明,注入钨离子可减少由氧和锡组成相的氧、锡比率,而注入氧离子则可增加这种比率。更多还原

【Abstract】 Tin oxide films prepared by sputtering deposition were subjected to W⁺, O⁺ implanting and annealing. XRD and XPS were used to characterize the films. The effects of implantation on the phase transform in the films were studied. Deposition by sputtering a SnO₂ target at room temperature yields amorphous SnO₂. O⁺ implantation induces a transform of the amorphous SnO₂ into crystalline SnO₂. W⁺ implantation induces SnO formation in the amorphous film. W⁺ implanted and then O⁺ implanted films show evidence of Sn₃O₄. The experiments indicate that W⁺ implantation decreases the O∶Sn ratio of the phases composed of tin and oxygen in the film, while O⁺ implantation increases this ratio.更多还原