【摘要】 详细研究了ZEP520在Si衬底上的对比度、灵敏度、分辨率,并分析了曝光剂量、抗蚀剂厚度对ZEP520线条和圆孔尺寸的影响;同时还初步研究了ZEP520在GaAs衬底上的曝光工艺。实验结果表明,ZEP520的灵敏度远高于PMMA,在Si和GaAs上用ZEP520能分别制作出100nm和130nm宽的细线条,通过预烘GaAs衬底,可以消除ZEP520中的裂纹,因此用ZEP520制作器件或电路中各种细小凹槽图形是十分有利的。更多还原

【Abstract】 The resist process is of great importance to the resolution of E-beam lithography. ZEP520 is an excellent positive E-beam resist.The contrast, sensitivity and resolution of ZEP520 on Si substrate are investigated in detail, and the influence of exposure dose and resist thickness on the size of ZEP520 lines and circular holes are discussed. The E-beam exposure process of ZEP520 on GaAs substrate is also studied. The results show that the sensitivity of ZEP520 is much higher than that of PMMA.Using ZEP520, 100 nm and 130 nm wide lines are exposed on Si and GaAs substrate, respectively.The flaws of ZEP520 can be eliminated by pre-baking the GaAs substrate. So it is advantageous to make use of ZEP520 to fabricate small groove patterns in devices or circuits.更多还原