【摘要】 利用原子力显微镜对8-羟基喹啉硼化锂(LiBq4)/铟锡氧化物和8-羟基喹啉硼化锂/酞菁铜(CuPc)/铟锡氧化物表面分别进行了扫描,显示了LiBq4在不同衬底上的形貌差异,并进一步利用样品表面的x射线光电子能谱图验证了这一差异.实验表明,CuPc层的加入改善了LiBq4的成膜质量,并将这种改善归因于分子构型与电子亲和势的不同.更多还原

【Abstract】 We have investigated the surfaces of the samples LiBq₄/ITO and LiBq₄/CuPc/ITO. The atomic force microscopy （AFM） observations indicate that different surface morphologies are formed on different substrates, and what is more, x-ray photoelectron spectroscopy is also utilized to further demonstrate the AFM results. It is concluded that the introduction of a CuPc buffer layer under the LiBq₄ layer can improve the film quality of LiBq₄, and the improvement should be attributed to the differences in molecular structure and electron affinity.更多还原