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Cu(100)(21/2×221/2)R45°-O的表面结构与电子态的密度泛函研究
Density functional theory study on the atomic structure and electronic states of Cu(100) (21/2×221/2)R45°-O surface
【摘要】 用第一性原理的总能计算研究了Cu(100))面的表面结构、弛豫以及氧原子的(2×22)吸附状态.计算给出了Cu(100)(2×22)R45°-O吸附表面的结构参数,并得到了上述结构下氧吸附的Cu(100)表面氧原子和各层Cu原子的电子态密度.计算得到的吸附表面功函数为4.58eV,与清洁Cu(100)表面功函数(~4.53eV)几乎相同.吸附氧原子与最外层铜原子之间的垂直距离约为0.02nm,其能带结构体现出一定的金属性,同时由于Cu-O的杂化作用在费米能以下约6.4eV附近出现了局域的表面态.可以认为,在Cu(100)(2×22)R45°的氧吸附表面结构下,吸附氧原子和衬底之间的结合主要来源于表面最外层铜原子与氧原子的相互作用.
【Abstract】 The surface structure, relaxation, and oxygen adsorbed (2×22)R45° Cu(100) surface are studied by ab initio total energy calculation. The calculated atomic structure for the Cu(100) (2×22)R45°-O surface is quite close to the experiments except the positions of surface layer Cu atoms. The adsorbed O atoms is lying approximately 0.02 nm above the outermost Cu layer and produces a hybridized band and yields some localized surface states around 6.4 eV below E_F. The calculated work function for studied oxygen adsorbed surface phase is 4.58 eV, which is close to that of clear Cu(100) surface (~4.53 eV). It is concluded that the bonding between adsorbate and substrate copper atoms is approximately limited to the first surface layer.
【Key words】 Cu(100) (21/2×221/2)R45°-O surface; missing-row reconstruction; surface electronic state;
- 【文献出处】 物理学报 ,Acta Physica Sinica , 编辑部邮箱 ,2005年11期
- 【分类号】O481.1
- 【被引频次】2
- 【下载频次】142