【摘要】 根据红外辐射理论和薄膜光学原理计算了高品质ITO(indiumtinoxide)导电膜的红外发射率,其理论曲线与实测曲线基本符合.并得出方块电阻小于30Ω时,ITO膜在红外波段8—14μm的平均红外发射率理论值小于0.1.实际制备方块电阻小于10Ω的ITO膜具有优良的红外隐身性能.讨论了高品质ITO膜具有低红外发射率的物理机理,并提出了低红外发射率临界方块电阻值,这有利於理论研究和工艺制备红外隐身ITO膜.更多还原

【Abstract】 Infrared emissivity of high quality indium tin oxide (ITO) film has been calculated based on the infrared radiation theory and thin film optical theory, the theoretical curves and the testing curves basically agree with each other. It is concluded that when the sheet resistance is less than 30Ω, the theoretical value of infrared emissivity of ITO films on the infrared wave band of 8μm to 14μm will be less than 0.1. Therefore, the ITO film of practical sheet resistance less than 10Ω has good infrared stealthy capability. Physical mechanism of low infrared emissivity for ITO film is discussed, and the critical sheet resistance of low infrared emissivity, which conduce to the theoretical study and the manufacture of infrared stealthy ITO film, is put forward in this paper.更多还原