【摘要】 报道Ge在Ru(0 0 0 1)表面上生长以及相互作用行为的扫描隧道显微镜 (STM)和x射线光电子能谱 (XPS)研究 .STM的实验结果表明Ge在Ru(0 0 0 1)表面的生长呈典型的Stranski_Krastanov生长模式 ,Ge的覆盖度小于单原子层时呈层状生长 ,而从第二层开始呈岛状生长 .XPS测量显示衬底Ru(0 0 0 1)与Ge的相互作用很弱 .Ru(0 0 0 1)表面的Ru 3d5 2 和Ru 3d3 2 芯态结合能分别处于 2 79 8和 2 84 0eV .随着Ge的生长 ,到Ge层的厚度为 2 0个单原子层 ,衬底Ru 3d芯态结合能减小了约 0 2eV ,而Ge 3d芯态结合能从Ge低覆盖度时的 2 8 9eV增加到了 2 9 0eV ,其相对位移约为 0 1eV .更多还原

【Abstract】 Scanning tunneling microscopy (STM) and x_ray photoemission spectroscopy (XPS) studies of germanium growth on Ru(0001) were carried out. STM measurements showed a typical Stranski_Krastanov growth mode of Ge on Ru(0001), i.e. first atomic wetting layer is formed in the submololayer range, and the formation of islands on top of a flat first layer occurs for subsequent layers. XPS measurements showed a weak interaction between Ge and the substrate of Ru(0001). The Ru 3d 5/2 and Ru 3d 3/2 corelevels of Ru(0001) are located at 279 8 and 284 0 eV in binding energy respectively. Upon Ge growth, up to a thickniss of about 20 atomic layers, the Ru 3d corelevels shift downward in binding energy by an amount of about 0 2 eV,while the Ge 3d corelevel shift upward in binding energy from the Ge low coverage limit of 28 9 eV to 29 0 eV,with a relative change of 0 1 eV.更多还原