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声空化物理化学综合法制备发光多孔硅薄膜的微结构与发光特性

The microstructure and characteristics of luminescent porous silicon film prepared by the physicochemical sonic-vacating method

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【作者】 刘小兵史向华廖太长任鹏柳玥柳毅熊祖洪丁训民侯晓远

【Author】 Liu Xiao-Bing 1)2) Shi Xiang-Hua 1)2) Liao Tai-Chang 4)5) Ren Peng 6) Liu Yue 2) Liu Yi 2) Xiong Zu-Hong 3) Ding Xun-Min 2) Hou Xiao-Yuan 2) 1)(Department of Physics and Electronic Science,Changsha University of Science and Technology,Changsha\ 410077,China) 2)(State Key Laboratory of Surface Physics,Fudan University,Shanghai\ 200433,China) 3)(Department of Physics,Southwest Normal University,Chongqing\ 400715,China) 4)(State Key Laboratory of Chemo/Biosensing and Chemometrics of Hunan University,Changsha\ 410082,China) 5)(School of Computer and Commuication Engineering,Changsha University of Science and Technology,Changsha\ 410076,China) 6)(Center of Journal,Changsha University of Science and Technology,Changsha\ 410076,China)

【机构】 长沙理工大学物理与电子科学系湖南大学化学生物传感与计量学国家重点实验室长沙理工大学期刊中心复旦大学应用表面物理国家重点实验室西南师范大学物理系复旦大学应用表面物理国家重点实验室 长沙410077上海200433长沙410077长沙410082长沙理工大学计算机与通信工程学院长沙410076重庆400715上海200433

【摘要】 声空化所引发的特殊的物理、化学环境为制备高效发光的多孔硅薄膜提供了一条重要的途径 .实验结果表明 ,声化学处理对于改善多孔硅的微结构 ,提高发光效率和发光稳定性都是一项非常有效的技术 .超声波加强阳极电化学腐蚀制备发光多孔硅薄膜 ,比目前通用的常规方法制备的样品显示出更优良的性质 .这种超声的化学效应源于声空化 ,即腐蚀液中气泡的形成、生长和急剧崩溃 ,在多孔硅的腐蚀过程中 ,孔中的氢气泡 ,由于超声波的作用增加了逸出比率和塌缩 ,有利于孔沿垂直方向的腐蚀 .

【Abstract】 The special physicochemical environment caused by sonic-vacating provides an important outlet for the preparation of highly efficient luminescent porous silicon films.Experimental results show that sonic-chemical treatment is an effective technology for the improvement of the microstructure of porous silicon,and the luminescent efficiency and stability thereof.Luminescent porous silicon films,prepared by ultrasonic-enhanced anode electrochemical etching,display better qualities than the samples prepared by conventionai methods widely used at present.This ultrasonic-chemical effect roots in sonic-vacating,i.e. the generation,formation and rapid collapse of bubbles in the etching solution.In the process of the porous silicon being etched,the escape rate and caving-in of hydrogen bubbles in the pores is increased as a result of the work of the ultrasonic waves,which is helpful to the vertical etching of the pores.

【基金】 湖南省自然科学基金 (批准号 :0 4JJ3 0 3 0 );国家自然科学基金 (批准号:195 2 5 410 )资助的课题~~
  • 【文献出处】 物理学报 ,Acta Physica Sinica , 编辑部邮箱 ,2005年01期
  • 【分类号】O484
  • 【被引频次】12
  • 【下载频次】196
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