【摘要】 以二茂铁为前驱体,提供催化剂与部分碳源,三聚氰提供氮源与另外一部分碳源,在硅基底上制备出了碳纳米管阵列.碳纳米管为多壁结构,单根碳纳米管的平均直径为50nm.碳纳米管的X射线光电子谱(XPS)在398.4eV处出现特征峰,表明为氮掺杂的碳纳米管.用其制备的场效应管在室温大气环境下稳定地表现为n型场效应特性,并且具有非常低的关闭状态电流(off-statecurrent)以及良好的负门电压对漏极电流的抑制作用,单位源漏偏压下漏极电流为100pA量级.实验中采用了源/漏电极不对称的绝缘层结构,使得门电压对源漏两极的电场调制也不对称,从而实现了对漏电极的门电压调制.更多还原

【Abstract】 Multi-walled carbon nanotube (CNT) arrays have been produced on silicon substrate by an one-step route based on the pyrolysis of mixture of ferrocene and melamine under well-chosen synthesis condition. Trans-mission electron microscope (TEM) and scanning electron microscope (SEM) studies showed the products were all multi-walled CNTs that are about 50 nm in diameter. X-ray photoelectron spectroscopy study revealed that the CNTs were nitrogen-doped. Field effect transistors (FETs) base on the nitrogen-doped MWCNT in an asymmetry-source/drain-electrodes configuration were further fabricated. And electrical transport measurements exhibited typical n-type behavior. The off-state current through the FETs is extremely low, about 100 pA in order. The asymmetry isolation layer between the source/drain electrodes and the gate used in the experiment results in asymmetric mod-ulation of gate electrostatic field to source electrode and drain electrode. Therefore solo gate electrostatic field modulation to the drain electrode is realized.更多还原