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电化学制备Ba1-xSrxMoO4薄膜及其表征
Electrochemical preparation of Ba1-xSrxMoO4 thin films and their characterization
【摘要】 采用恒电流电化学方法于室温条件下在金属钼片上制备白钨矿结构的Ba1-xSrxMoO4晶态薄膜;通过X射线衍射仪(XRD)、扫描电子显微镜(SEM)和X光电子能谱(XPS)对制备的薄膜进行了分析表征;探讨了Ba1-xSrxMoO4薄膜的成膜机制。结果表明,制备的Ba1-xSrxMoO4表面均匀致密,为四方单相薄膜。适宜的电化学制备工艺条件为电流密度1mA/cm2,电解液的pH为13,电化学处理时间为1h。
【Abstract】 Crystallized Ba1-xSrxMoO4 thin filmswith a scheelite-structure were prepared on molybdenum metal substrate by constant current electrochemical method at room temperature; the prepared thin films were characterized by using X-ray diffraction (XRD), scanning electronic microscopy (SEM)and X-ray photo electronic spectroscopy (XPS)measurements; the formation mechanism of Ba1-xSrxMoO4 thin films was also discussed. The results reveal that the prepared Ba1-xSrxMoO4 thin films are uniform and dense in surface, and the thin films are single tetragonal structure; the appropriate processing conditions are that the current density is 1 mA/cm2, the pH is 13, and the duration of electrochemical reaction is one hour.
- 【文献出处】 无机盐工业 ,Inorganic Chemicals Industry , 编辑部邮箱 ,2005年02期
- 【分类号】TQ174
- 【被引频次】3
- 【下载频次】55