【Abstract】 CuInS2 thin films have been prepared by ion layer gas reaction (ILGAR) using C2H5OH as solvent, CuCl and InCl3 as reagents and H2S gas as sulfuration source. The effects of cationic concentrations and numbers of cycle on the prope rties of CuInS2 film were investigated. The chemical composition, crystalline st ructure, surface topography, deposited rate, optical and electronic properties o f the films were characterized by X-ray diffractrometry (XRD), X-ray photoelectr on spectroscopy (XPS), scanning electron microscopy (SEM), ultraviolet-visible s pectrometry (UV-Vis) and Hall System. The results show that the crystalline of C uInS2 thin films and the deposition rate have been improved with the increase of cationic concentration, while CuxS segregation phases appear with further incre asing cationic concentration. The deposition rate is close to constant as cation ic concentration is fixed. CuInS2 thin film derived form lower cationic concentr ation is uniform, compact and good in adhesion to the substrates. The absorption coefficient of CuInS2 thin films is larger than 104 cm-1, and the band gap Eg i s in the range of 1.30~1.40 eV. The dark resisitivity of the thin film decreases from 50 to 10 Ω·cm and the carrier concentration ranges are over 1016 cm-3.更多还原