【摘要】 通过超声喷雾热解工艺,以醋酸锌和醋酸铵的混合水溶液为前驱溶液,在单晶Si(100) 衬底上制备了N掺杂ZnO薄膜,采用热质联用分析(TG—DSC—MS)、X射线衍射(XRD)、场发射扫描电镜(FESEM)和霍耳效应(Hall-effect)测试等手段研究了喷雾热解工艺下N掺杂ZnO薄膜的生长机理、晶体结构和电学性能.结果表明,随衬底温度的不同,薄膜呈现出不同的生长机理,从而影响薄膜的晶体结构和电学性能.在优化的衬底温度下,实现了ZnO薄膜的p型掺杂,得到的p型ZnO薄膜具有优异的电学性能,载流子浓度为3.21×1018cm-3,霍耳迁移率为110cm2·V-1s-1,电阻率为1.76×10-2Ω·cm.更多还原

【Abstract】 N-doped ZnO films were grown at Si(100) substrates by ultrasonic spray pyrolysis with the precursor of zinc acetate and ammonium acetate. Thermal-mass spectrometric analysis (TGDSC-MS), X-ray diffraction (XRD), and field emission scanning electron microscope (FESEM) were employed to analyze the growth mechanism, crystal structure and electrical properties of films. Results show that the films grown at different substrate temperatures show different growth mechanisms, which could influence crystal structure and electrical properties of films. The successful p-type doping can be realized at an optimized substrate temperature. The p-type ZnO film shows excellent electrical properties such as a hole concentration of 3.70×1018cm~3, hole mobility of 110cm2 ·V-1s-1 and resistivity of 1.4×10-2 Ω ·cm.更多还原