【摘要】 本文采用基于硅基的BiCMOS工艺设计制作了一款带宽为DC到2 .6GHZ的低噪声、高增益MMIC放大器。该放大器为了实现从DC到2 .6GHz的带宽,保证有足够的增益和理想的增益平坦度,采用了负反馈结构,两级级联,并选用了一种结构新颖的微波晶体管。该放大器具有功率增益高、频带较宽、噪声系数较小的特点。在仿真过程中其3dB带宽约3GHz ,增益为2 6.6dB( 1 .5GHz时) ,1dB压缩点输出功率约为1dBm ;样品的实测结果为3dB带宽约2 .6GHz ,增益为2 6dB( 1 .5GHz时) ,1dB压缩点输出功率约为1dBm更多还原

【Abstract】 Using a BiCMOS process based on Silicon wafer, this paper designs and manufactures a DC to 2.6GHz,low noise,high power gain MMIC amplifier.This amplifier utilizes negative feedback structure and a two stage cascade,selects a novel microwave transistor,thus it can ensure the bandwidth,the enough power gain,and the satisfying flatness.The amplifier features high power gain,wide bandwidth,low noise figure.During the simulation,the 3dB bandwidth is about 3GHz,the power gain( 1.5 GHz) is 26.6dB,and the 1dB compression point is about 1dBm.The processed sample’s 3dB bandwidth is about 2.6GHz,the power gain (1.5GHz) is 26dB,the 1dB compression point is about 1dBm.更多还原