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一类半导体方程组整体弱解的存在性
Existence of Global Weak Solutions to a Class of Semiconductor Equations
【摘要】 考虑一类半导体方程组的混合初边值问题。利用正则化算子和逼近过程,通过一系列先验估计,在迁移率既不为常数,又不满足速度饱和的条件下,证明了其整体弱解的存在性.
【Abstract】 <Abstrcat> Some mixed initial boundary value problems of the semiconductor equations were studied. Using the regularization operator and approach process and a series of prior estimates, the existence of the global weak solutions was proved under the conditions that the mobility neither equals to a constant nor satisfies velocity saturation.
【关键词】 半导体方程;
混合边值;
整体弱解;
正则化算子;
【Key words】 semiconductor equation; mixed boundary value; global solution; regularization operator;
【Key words】 semiconductor equation; mixed boundary value; global solution; regularization operator;
【基金】 教育部科技基金资助重点项目(104090)
- 【文献出处】 天津师范大学学报(自然科学版) ,Journal of Tianjin Normal University (Natural Science Edition) , 编辑部邮箱 ,2005年02期
- 【分类号】O411.1
- 【下载频次】21