【摘要】 利用企业的电子陶瓷工艺制备了ZnO掺杂Bi0.5(Na1-x-yLixKy)0.5Ti O3无铅压电陶瓷,研究了ZnO掺杂对该体系陶瓷的介电压电性能与微观结构的影响.X射线衍射结果表明,当ZnO含量小于0.5wt%时,掺杂的ZnO扩散进入了Bi0.5(Na1-x-yLixKy)0.5Ti O3钙钛矿结构的晶格;SEM观察结果表明,少量的ZnO掺杂可以改善该陶瓷的微结构;介电压电性能研究结果表明,当掺杂量较少时,ZnO对该体系陶瓷的介电压电性能有一定的改善,但不明显.更多还原

【Abstract】 ZnO-doped Bi 0.5 （Na 1-x1-y1 Li x1 K y1 ） 0.5 TiO₃ lead-free piezoelectric ceramics were prepared by traditional electronic ceramics processes. The effect of ZnO-doping on the dielectric and piezoelectric properties and microstructure of the ceramics was investigated. X-ray diffraction shows that the doped ZnO diffuses into the lattice of Bi 0.5 （Na 1-x1-y1 Li x1 K y1 ） 0.5 TiO₃ with pure perovskite phases, and SEM observation indicates that doping with a small amount of ZnO can improve the microstructure of the ceramics. The research results indicate that ZnO-doping can’t improve greatly the properties of Bi_0.5(Na_1-x-yLi_xK_y)_0.5TiO₃ceramics.更多还原