【摘要】 采用溶胶-凝胶法在普通玻璃片上制备了ZnO∶Al薄膜.通过XRD、UV透射谱和电学测试等分析方法,研究了掺Al对薄膜的组织结构和光电性能的影响.分析表明所制备的薄膜具有c轴择优取向,随着掺Al浓度的增加,(002)峰向低角度移动.薄膜电阻率随掺Al浓度变化,当掺Al浓度为1.5%,薄膜电阻率降至6.2×10-4Ω.cm.掺Al量的增加同时使得薄膜的禁带宽度变大,光吸收边出现蓝移.更多还原

【Abstract】 Al doped ZnO thin films were prepared on glass substrates by sol gel method, which were characterized by X-ray diffraction, electrical measurement and ultra-violet spectrometer. It is found that all the thin films have a preferential c-axis orientation. With increase of Al doping, the peak position of the (002) plane is shifted to the low 2θ value. A minimum resistivity of 6.2×10 -4 Ω·cm is obtained for the film doped with 1.5 % Al. However, the resistivity increases with increase in Al concentration. The bandgap is found to broaden with increasing dopant concentration, which may be attributed to the Burstein-Moss shift.更多还原