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CdZnTe(110)面表面原子弛豫和表面态的研究
Study on Atomic Relaxation and Surface State of CdZnTe(110) Surface
【摘要】 通过真空Ar+离子刻蚀获得理想清洁的(110)表面,采用低能电子衍射(LEED)观察了(110)面表面原子结构,观察到(110)面表面未发生重构。采用光电子能谱技术验证了(110)面表面原子结构发生了弛豫。采用角分辨光电子谱(angle-resolved photoem ission spectropy)实验测量出在费米能级以下0.9 eV处存在峰宽约为0.8 eV的表面态。并估算出其表面电荷密度约为6.9×1014cm-2,亦即表面Te和Cd(Zn)原子各有一个悬键。
【Abstract】 The atomic structure of the clean CZT(110) surface obtained by Ar+ etching in vacuum was observed through low-energy electron diffraction(LEED),where no surface reconstruction was discovered.The surface atomic relaxation was verified by the spectra of photoemission.Angle-resolved photoemission spectropy(ARPES) was used to characterize the surface state of the clean CZT(110) surface,through which we found a 0.8eV-wide surface band at the peak of 0.9eV below the Fermi energy containing about 6.9×1014electrons/cm2,i.e.approximately one electron per surface atom.
【Key words】 LEED; ARPES; surface atom relaxation; surface state;
- 【文献出处】 人工晶体学报 ,Journal of Synthetic Crystals , 编辑部邮箱 ,2005年06期
- 【分类号】TN304.22
- 【被引频次】2
- 【下载频次】181