节点文献

InGaAlP/InGaP多量子阱中的红外向可见光的上转换

Upconversion of Infared to Visible Light in InGaAlP/InGaP Multi-quantum Well

  • 推荐 CAJ下载
  • PDF下载
  • 不支持迅雷等下载工具,请取消加速工具后下载。

【作者】 尉吉勇黄柏标于永芹张琦姚书山张晓阳秦晓燕

【Author】 WEI Ji-yong,HUANG Bai-biao,YU Yong-qin,ZHANG Qi,YAO Shu-shan,ZHANG Xiao-yang,QIN Xiao-yan(State Key Laboratory of Crystal Materials,Institute of Crystal Materials,Shandong University,Jinan 250100,China)

【机构】 山东大学晶体材料研究所山东大学晶体材料研究所 晶体材料国家重点实验室济南250100晶体材料国家重点实验室济南250100晶体材料国家重点实验室济南250100

【摘要】 利用808nm激光二极管泵浦的Nd:YAG晶体发出的1064nm皮秒激光器实现了InGaAlP多量子阱材料的红外1064nm向可见光波长660nm、625nm、580nm的上转换,并且通过条纹相机收集的时间分辨表征了此材料的上转换激发态的寿命。波长1064nm向625nm的上转换激发态寿命约为5ns,而1064nm向660nm的上转换激发态寿命约为7ns。通过双光子原理解释了此现象。

【Abstract】 The upconversion property converting from 1064nm wavelength to 660nm,625nm and 580nm of In GaAIP multiple quantum well material was realized using Nd:YAG 1064nm laser pumped by 808nm laser diode,and the upconversion PL spectrum and time resolution spectrum related to the material were characterized by the strip camera.The upconversion life of excited state was measared as well.The experimental results show that the upconversion life of excited state converting from 1064nm to 625nm is about 5ns,and that of the excited state from 1064nm to 660nm is about 7ns.The phenomena were explained through the nonlinear two photon absorption process.

  • 【文献出处】 人工晶体学报 ,Journal of Synthetic Crystals , 编辑部邮箱 ,2005年04期
  • 【分类号】O472.3
  • 【下载频次】121
节点文献中: 

本文链接的文献网络图示:

本文的引文网络