【摘要】 采用离子束溅射制备Si/Ge多层膜,通过X射线小角衍射计算其周期厚度及各子层的厚度,用Raman光谱对Si/Ge多层膜的微观结构及Si子层的结构进行表征。结果表明,所制备的Si/Ge多层膜中,当Ge子层的厚度为6. 2nm时, Si子层的结晶质量较好,表明适量的Ge含量有诱导Si结晶的作用。更多还原

【Abstract】 Si/Ge multilayer films were prepared by ion-beam sputtering. The microstructure parameters of multilayer films were characterized by low angle X-ray diffraction and Raman scattering. The result shows that the crystalline quality of Si sublayer is better than others when the thickness of Ge sublayers is (6.2nm. )This indicates that a proper content Ge can induce an amorphous Si crystallization.更多还原