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脉冲激光沉积法生长Nd:LuVO₄薄膜

Growth of Nd:LuVO₄ Films by Pulsed Laser Deposition

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【Author】 WANG Xiao-xia~1,LI Hong-xia~1,ZHANG Huai-jin~1,WANG Ji-yang~1,SHEN Ming-rong~2, FANG Liang~2,NING Zhao-yuan~2 (1. State Key Laboratory of Crystal Materials,Shandong University,Jinan 250100,China; 2. School of Physical Science and Technology,Soochow University,Suzhou 215006,China) (Received 8 October 2004)

【机构】山东大学晶体材料国家重点实验室；苏州大学物理科学与技术学院；苏州大学物理科学与技术学院济南250100；济南250100；苏州215006；苏州215006；

【摘要】采用脉冲激光沉积技术在不同温度和氧分压下,在(100)Si片和抛光石英片上生长了一系列(200)面择优取向的Nd:LuVO4 薄膜。利用X射线衍射分析了所制备薄膜的成膜情况,认为成膜较为适宜的温度为700℃,氧分压为10Pa。用棱镜耦合法测得了该薄膜的有效折射率为2. 0452。利用扫描电镜(SEM)观察了Nd:LuVO4 薄膜的表面形貌。更多还原

【Abstract】 The（200）dominated Nd:LuVO₄ films were successfully fabricated on（100）Si and polished SiO₂ under different temperatures of substrates and different oxygen pressures.By XRD,it is shown that a film with good crystallization was deposited at about 700℃ and 10Pa.The effective refractive index is 2.0452,which was measured by prism coupler method.The surface morphology of Nd:LuVO₄ films was observed by SEM.更多还原