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ZnS晶体中浅电子陷阱对光电子衰减过程的影响

Effect of Shallow Electron Traps on the Decay Process of Photoelectron in ZnS Crystals

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【作者】 董国义窦军红张蕾韦志仁葛世艳郑一博林琳田少华

【Author】 DONG Guo-yi~1,DOU Jun-hong~1,ZHANG Lei~2,WEI Zhi-ren~1,GE Shi-yan~1, ZHENG Yi-bo~1,LIN lin~1,TIAN Shao-hua~1 (1.College of Physics Science and Technology,Hebei University,Baoding 071002,China; 2.The Central Institute for Correctional Police,Baoding 071000,China)

【机构】 河北大学物理科学与技术学院中央司法警官学院河北大学物理科学与技术学院 保定071002保定071002保定071000保定071002

【摘要】 本文采用微波吸收法,测量了ZnS:Mn,Cu:I,Br粉末材料受到超短激光脉冲激发后,其光生电子和浅束缚电子的衰减过程。发现制备过程中Mn2+、Cu+、I-、Br-的掺杂量对光生导带电子的衰减过程有明显的影响。光生电子寿命是I-、Br-形成的浅施主能级和Cu+受主能级、Mn2+发光中心共同作用的结果。本文还测量了材料的热释光曲线,Cu+受主能级、Mn2+发光中心会影响热释光强度,证实I-、Br-形成电子陷阱对光生电子和浅陷阱中的电子寿命有延长作用,而Mn2+发光中心会起到缩短寿命的作用。

【Abstract】 The decay process of photogenerated charge carriers of ZnS:Mn,Cu:I,Br luminescence materials after excitation with short pulse laser was investigated by using microwave absorption dielectric spectrum detection technique in this paper.It is found that the concentration of Mn2+,Cu+,I-,Br- dopant has a great influence on the lifetime of electrons in conduction band.The lifetimes of electrons are determined by the synergistic action of the shallow donor energy level formed by I- and Br-,Cu+ acceptor energy level and Mn2+ luminescence center.In addition,the thermoluminescence spectra of ZnS:Mn,Cu:I,Br luminescent materials were measured.Cu+ acceptor energy level and Mn2+ luminescence center have an effect on the intensity of thermoluminescence spectra.It has been proved that the electron traps formed by I- and Br- prolonged the lifetimes of photoelectrons and shallow-trapped electrons, while Mn2+luminescence centers shortened the lifetimes of photoelectrons and shallow-trapped electrons.

【基金】 河北省自然科学基金(E2004000117;F2004000130)
  • 【文献出处】 人工晶体学报 ,Journal of Synthetic Crystals , 编辑部邮箱 ,2005年01期
  • 【分类号】TN304
  • 【被引频次】1
  • 【下载频次】145
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