【摘要】 InN材料具有着巨大的应用潜力,伴随着本身特性的揭秘,已成为最近两年内最热门的研究材料之一．介绍了InN纳米线的基本特性,讨论了InN纳米线材料的制备技术及其应用．利用CVD法研制的GaN纳米线的直径已达到40-80 nm;长度可以达到1 000 nm;InN纳米线具有InN的六方纤锌矿结构,其PL谱具有宽的发射峰,谱峰中心位于1．85 eV．更多还原

【Abstract】 Due to the huge application potential and the secrets of the characters having been revealed, the InN material has already been one of the most attractive materials in recent two years. In this paper, the basic properties of InN nanowires were introduced. The fabrications and applications of InN nanowires were discussed. The diameter of the nanowires grown by CVD is about 40-80 nm range, the length is about 1 000 nm; and the InN nanowires are single crystal with hexagonal wurtzite structure and its PL spectra showed a broad emission peak centered at 1.85 eV.更多还原