【摘要】 主要介绍了多孔硅的制备方法(化学法、电化学法及原电池法等)、多孔硅导热系数测试的几种常用手段(温度传感器法、显微拉曼散射法及光声法等)、导热系数的理论模型及影响因素.此外,采用不同方法制备了多孔硅样品,分析了其表面形貌并用显微拉曼光谱法测定了导热系数.结果发现,化学法制备的多孔硅孔径尺寸大于微米量级,而利用大孔硅电化学和原电池法得到的样品孔径尺寸小(约20nm),属于介孔硅.由于腐蚀条件的不同,多孔硅的孔隙率和厚度也不同,多孔硅的导热系数随孔隙率和厚度的增大而迅速减小.更多还原

【Abstract】 In this paper, preparation methods of porous silicon (chemical methods, electrochemical methods, galvanic methods, etc.) are introduced and the theoretical models, influence factors and mea-(surement) methods (thermal sensors, micro-Raman scattering and photoacoustic technique) for porous silicon’s thermal conductivity are discussed. Furthermore, different porous silicon samples were prepared, and whose surface morpho-(logy) analysis and thermal conductivity measurement using micro-raman technology were performed. The results are that pore size of porous silicon(higher tham micron) prepared by chemical method is much bigger than that of electrochemical methods and galvanic methods(about 20 nm). The porosity and thickness of porous silicon are different for samples prepared by erosion conditions. When porosity and thickness increase, thermal conductivity will decrease rapidly.更多还原