【摘要】 介绍了193nm光刻中的散射条技术,并利用标量衍射和傅里叶光学理论,对掩模和光瞳平面上衍射图形的空间频率进行了深入的分析,从理论上解释了散射条的工作原理。通过商用光刻模拟软件PROLITH,对散射条的参数进行了优化,并总结出193nm光刻中孤立线散射条的优化方法。更多还原

【Abstract】 Assist bars are a proven effective optical proximity correction technique that enhances wafer imaging performance for current and future technology nodes. In this paper, mask and image properties are analyzed from a spatial frequency perspective, to explain how and why these assist features improve the image quality of isolated lines. In addition, using PROLITH, a program for lithography simulation, the optimal position and width of scattering bars in 193 nm lithography are found, and methods to optimize parameters of scattering bars to the isolated pattern are summarized.更多还原