【摘要】 文章描述了PDSOI器件的体接触失效过程,介绍了一种PDSOI器件一级近似体接触电阻计算方法;提出了一种实用的体接触电阻及其版图寄生参数的模型化方法。最后,应用体接触模型,设计了一个应用于0.8μmPDSOI128kSRAM的灵敏放大器,给出了仿真结果。更多还原

【Abstract】 The effect of floating body and body-contact in PD SOI devices is described, and a first approximation for the minimum body resistance of a long channel transistor is introduced. As a solution to body-contact effect, a model for distributed body resistance and parasitic capacitive load is presented. Based on the body-contact model, a sensing amplifier for 0.8 μm PD SOI 128k SRAM is designed, and simulation results are provided.更多还原