【摘要】 通过对氮化硅薄膜干法刻蚀工艺实验结果的测量,得到硅片表面非均匀性分布的具体测 量数据,并对这种现象的成因进行了定性的理论分析,为下一步建立刻蚀工艺设备模型准备了充足 的实验数据。更多还原

【Abstract】 An experiment is conducted on dry etching in Si3N4, in which the non-uniformity profile on the wafer surface is measured. Results from the measurement are analyzed qualitatively for the cause of non-uniformity profile. It provides all data needed for setting up an etching equipment model.更多还原