【摘要】 利用射频磁控溅射法在Si(111)衬底上先溅射ZnO缓冲层,再溅射Ga2O3薄膜,然后在开管炉中分别以850℃,900℃,950℃和1 000℃等温度及常压下通氨气进行氨化,反应生长GaN薄膜。利用该方法制备的GaN薄膜是沿c轴方向择优生长的六角纤锌矿多晶结构,并且随着氨化温度的升高,GaN向棒状和线状形态生长。更多还原

【Abstract】 In this stpaperudy, ZnO buffer layer was sputtered on Si（111） substrate using radio frequency sputtering system and then Ga₂O₃ film was sputtered on them. ZnO/Ga₂O₃ film was ammoniated at 850℃, 900℃, 950℃ and 1 000℃ in tube furnace under flowing NH₃ ambience to Chemical reaction fabricate GaN film. The measurement result of X-ray diffraction revealed that the as-prepared GaN film was grown in c axis orientation with hexagonal wurtzite structure. Fourier transform infrared spectrophotometer （FTIR） was used to measure the FTIR spectrum of the sample. The morphology and Structure of the GaN film were studied by Scanning Electron Microscopy and Transmission Electron Microscope. The result revealed that GaN film grew toward the stick form and line form appearance with the temperature high to 950 degree and 1000 degree.更多还原