【摘要】 分析了台面刻蚀程度对埋栅型STTHⅠ-Ⅴ特性的影响,表明台面刻蚀不足或过蚀程度太深都可能造成栅电极电压不能有效施加到栅体上,从而限制了栅体的控制能力,影响器件性能,严重时会导致特性异常,这是影响器件成品率的一个重要因素.台面刻蚀必须刻透外延层并适当过腐蚀,过腐蚀程度宜控制在栅体结深的1/10左右.更多还原

【Abstract】 The impact of the mesa etching degree on the Ⅰ-Ⅱ characteristics of the buried gate structure SITH are discussed, with the conclusion that both deficient etching and far over-etching could divorce the gate electrode from the gates. This weakens the control ability of the gates and influences the devices’ performance. Sometimes it may transfer the devices’Ⅰ-Ⅱ characteristics. Finally, it is pointed out that mesa etching must eat off the epitaxial layer above the gate walls and that epilayer over-etching is necessary. It is suitable that the over-etching degree should be controlled within ten percent of the gate junction depth.更多还原