【摘要】 介绍了通过使用原子力显微镜,在H钝化Si(100)的表面局部阳极氧化反应的表面氧化图案上刻写的纳米级Si 结构加工。这种氧化图形可被用作Si的可选择性蚀刻工艺的掩膜。带有临界特性的小到30 nm的边门Si 场效应晶体管也通过这种方法加工。更多还原

【Abstract】 Introduced the fabrication of nanometerscale Si structures by using an atomic force microscope to write surfaceoxide patterns by the local anodic oxidation of a Hpassivated Si (100) surface.These oxide patterns were used as masks for selective etching of the silicon.Sidegated Si field effect transistors with critical features as small as 30 nm have been fabricated by this method.更多还原