【摘要】 在实验室条件下对P型单晶硅片进行阳极电化学腐蚀制成多孔硅(PorousSilicon)样片,同时用适当配比的HNO3对多孔硅进行处理。比较了HNO3作用前后样片的光致发光(PL)谱,结果发现用HNO3处理的多孔硅的发光效率有显著提高。用XPS和SEM对样片测试的结果表明:酸处理后样片表面形成Si—O结构,其表面平均孔径增大,而且分布更均匀。更多还原

【Abstract】 PS samples used in this work were made with P-silicon by anodization method under experimental condition. Then we used HNO₃ to operate PS samples. The results of photoluminescence properties showed that the photoluminescence intensity of those PS samples that were treated by HNO₃ had a significant improvement. In addition,we carried out XPS and SEM experiments and found that the PS treated by HNO₃ occurred a kind of structure of Si—O, and the treated samples had a better distribution of holes.更多还原