【摘要】 利用一维光子晶体带隙结构对光发射特性进行调制,采用掺杂光子晶体微腔限制电磁场从而控制材料中的光传输。采用不同组分的氢化非晶氮化硅(a-SiNx:H)薄膜作为介质层和发光层,由等离子体化学气相淀积(PECVD)方法制备出一维全a-SiNx:H光子晶体微腔。观察到微腔对于发光层a-SiNx:H薄膜光致荧光显著的调制作用,发光峰的半高宽从原始的208nm强烈的窄化为11nm,峰值强度提高了2个数量级,品质因子为69。通过透射谱测量,清晰地观察到710nm处的谐振峰出现在一维光子晶体带隙中,进一步证实了微腔的选模特性。更多还原

【Abstract】 Photoluminescence (PL) modulation realized by one-dimensional photonic band gap structures.Microcavity was designed to confine electromagnetic field and control light transfer by the idea of doped photonic crystal,and fabricated by alternating the composition of a-SiN_x in PECVD system.It is observed the wide emission band width 208 nm is strongly narrowed to 11 nm,and a two order enhancement of PL peak intensity.The linewidth and quality factor of a-SiN_x photonic crystal microcavity is 11 nm and 69,respectively.A cavity mode at 710 nm is observed in transmittance spectra,which further verifies the cavity effects.更多还原