【摘要】 使用转移矩阵方法计算了GaN C6 0 多层膜一维光子晶体的带隙结构。计算结果表明,由厚度分别为2 1nm、4 9nm的GaN、C6 0 薄膜组成的多层膜结构,在中心带隙为6 . 4 6eV处有一不完全的光子带隙存在,反射率最高可达6 4 . 3%。更多还原

【Abstract】 The feasibility of using GaN/C_ 60 multilayer films as one-dimensional photonic band gap crystals was investigated by theoretical calculations using a transfer matrix method. The response has been studied both within and out of the periodic plane of GaN/C_ 60 multilayers. It is found that GaN/C_ 60 multilayer films show incomplete PBG behavior in UV region. A fabricated GaN/C_ 60 multilayers with two pairs of 49 nm C_ 60 and 21nm GaN layers exhibit a high reflectivity of 64.3% at a wavelength of 6.46eV, and this photonic crystal may be important for achieving materials with an incomplete band gap in UV region.更多还原