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在不同退火温度下射频磁控溅射CN_x膜的电子场发射性质
Electron Field Emission of RF Magnetron Sputtered CN_x Films Annealed at Different Temperatures
【摘要】 对磁控溅射沉积得到的CNx膜在不同温度下进行真空退火,退火前后CNx膜的化学键合采用X射线光电子能谱表征.结果发现,沉积的CNx膜中氮原子与sp,sp2,sp3杂化碳原子相键合,并对经过退火的CNx膜的键合结构和电子场发射特性的影响进行了研究.
【Abstract】 The carbon nitride films deposited by RF magnetron sputtering in a pure N2 discharge were annealed in vacuum up to 900 ℃. The chemical bonding of the films was studied using X-ray photoelectron spectroscopy and Raman spectra. It was found that the nitrogen atoms were bound to sp, sp2 and sp3 hybridized carbon atoms in as-deposited films. The effects of the thermal annealing on the bonding structure and the electron field emission characteristics of CNx films were investigated.
【关键词】 射频磁控溅射;
CN_x膜;
退火温度;
电子场发射;
【Key words】 RF magnetron sputtering; CN_x film; annealing temperature; electron field emission;
【Key words】 RF magnetron sputtering; CN_x film; annealing temperature; electron field emission;
- 【文献出处】 吉林大学学报(理学版) ,Journal of Jilin University (Science Edition) , 编辑部邮箱 ,2005年02期
- 【分类号】TB43
- 【被引频次】1
- 【下载频次】58