【摘要】 介绍了一种新型长波长InP基一镜斜置三镜腔型(OMITMiC)光电探测器,并对其进行了数值模拟。介绍了该光电探测器的两项关键制备工艺。首先,利用动态掩膜湿法腐蚀技术,通过调节HCl∶HF∶CrO3腐蚀溶液的选择比,在与InP晶格匹配的In0.72Ga0.28As0.6P0.4外延层上制备出了不同倾角的楔形结构。其次,利用选择性湿法腐蚀技术,通过FeCl3∶H2O溶液对In0.53Ga0.47As牺牲层的腐蚀,制备出了具有InP/空气隙的高反射率分布式布拉格反射镜(DBR)。更多还原

【Abstract】 A novel long-wavelength InP-based one-mirror-inclined three-mirror-cavity （OMITMiC） photodetector is introduced. The computational simulations are given and two key fabrication processes of this OMITMiC photodetector are introduced. One is the fabrication of several vertical taper structures with different inclined angles on the In_0.72Ga_0.28As_0.6P_0.4 epi-layers which are lattice-matched to InP substrate, that is realized by dynamic etch mask technique and adjusting the component ratio of HClHFCrO₃ solution. The other is that of high-reflectivity InP/air gap distributed Bragg reflectors （DBRs）, realized by the selective wet etching of In_0.53Ga_0.47As sacrificial layers with FeCl₃H₂O solution. Those two processes have laid the firm foundation for the successful fabrication of the OMITMiC photodetectors.更多还原