【摘要】 在硅单晶(100)衬底上用热氧化法氧化一层SiO2做缓冲层,在高纯铝靶上镶嵌金属Yb,Er,然后用中频磁控溅射法制备了镱铒共掺杂氧化铝薄膜。讨论了靶电压及沉积速率随氧流量的变化的磁滞回线效应,分析得出了沉积氧化物薄膜的最佳氧流量。在室温下检测到了薄膜的位于1535nm的很强的光致发光光谱(PL),并在光学掩模下用BCl3离子束对薄膜样品进行刻蚀,得到条形光波导。更多还原

【Abstract】 SiO₂ is formed on the monocrystalline silicon（100） substrate by means of high temperatare oxidation,then Yb and Er are embeded in highly pure aluminum,and Yb,Er-co-doped Al₂O₃ film is produced with middle frequeney sputter technique.The influence of target voltage and deposit rate varying with oxygen flow is discussed.The optimized oxygen flow of deposite oxide film is presented.A strong photoluminescence at 1535nm is detected at the room temperature.Optical film is carved by BCl₃ ion beam under optical mask to form square optical waveguide.更多还原