【摘要】 报道了用MBE的方法,在3英寸Si衬底上制备ZnTe/CdTe(211)B复合衬底材料的初步研究结果,该研究结果将能够直接应用于大面积Si基HgCdTeIRFPA材料的生长.经过Si(211)衬底低温表面处理、ZnTe低温成核、高温退火、高温ZnTe、CdTe层的生长研究,用MBE方法成功地获得了3英寸Si基ZnTe/CdTe(211)B复合衬底材料.CdTe厚度大于10μm,XRDFWHM平均值为120arcsec,最好达到100arcsec,无(133)孪晶和其他多晶晶向.更多还原

【Abstract】 The preliminary results on molecular beam epitaxial growth of ZnTe/CdTe(211)B composite substrates on silicon for HgCdTe FPAs applications were described. Si/ZnTe/CdTe(211)B composite substrate on 3-inch Si was obtained by the improvements in low temperature treatment on Si(211), low temperature ZnTe nucleation, high temperature annealing as well as high temperature ZnTe or CdTe growth. (133) twin-free CdTe (211)B layers were obtained. The CdTe thickness was larger than 10 μm. An averaged XRD FWHM of 120 arc sec with a minimum value of 100 arc sec was achieved.更多还原