【摘要】 在CdZnTe晶体生长时,有时会产生大颗粒的沉积相,严重的影响了CdZnTe晶片的质量,通过电子探针测试证明其为Cd沉积相。采用Cd气氛退火来消除Cd沉积相,可以改善CdZnTe晶片的质量。实验发现:在较高的温度(600℃)条件下,退火可以有效的消除大颗粒(>5μm)的Cd沉积相, 改善CdZnTe晶片红外透过率、X射线双晶回摆曲线半峰宽(FWHM)和腐蚀坑密度(EPD)。在此条件下对CdZnTe晶片进行退火,有助于提高CdZnTe晶片的性能。更多还原

【Abstract】 The big precipitates resulted in the CdZnTe growth affect the quality of wafers seriously, proved to be the Cadmium precipitates by the test of SEI. The paper attempts to remove the big radial Cadmium precipitates in the CdZnTe wafer by annealing in a vapor of Cd. After annealing at 600℃, the test removes the bigger Cd precipitates (>5μm) and improve CdZnTe wafer’s transmittance, FWHM and EPD. The conclusion can be drawn that annealing in Cd vapor can improve the properties of CdZnTe wafers.更多还原