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强流磁约束金属离子注入源
Metal ion implantation source with a permanent magnetic field
【摘要】 设计和制造了适合工业应用的强流金属离子源。离子源的电弧阴、阳电极之间和放电室壁采用永磁体阵列形成导流、屏蔽磁场,改进了电弧的放电特性和提高等离子体密度。离子注入源在加速电压为30kV、50Hz条件时,平均束流流强约为30mA,调试结果表明附加磁场提高了离子源性能。
【Abstract】 The metal ion implanter has a maximum uniform beam current of 30mA with a pulse duration of 1ms at an accelerating voltage of 30kV and the frequency of 50Hz. The array of permanent magnets distributes around the ion chamber, confines the plasma and improves the uniformity of the radial ion density. The result indicates that the extractive characteristic of the implantor is improved.
- 【文献出处】 核聚变与等离子体物理 ,Nuclear Fusion and Plasma Physics , 编辑部邮箱 ,2005年01期
- 【分类号】TL629.1
- 【被引频次】3
- 【下载频次】110