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GaAs太阳电池1MeV电子辐射效应数值模拟
Simulation of radiation effects on GaAs solar cell by 1MeV electrons
【摘要】 简要介绍了太阳电池的基本工作原理和辐射损伤机理。利用二维半导体器件数值模拟软件MEDICI,模拟计算了1MeV高能电子在辐射通量范围为1×1013~1×1015cm2时,对GaAs太阳电池主要输出参数(如开路电压Voc,短路电流Isc)的影响,并对计算结果进行了分析,计算结果与相关文献给出的实验数据吻合较好。
【Abstract】 The basic radiation effects of solar cell are introduced briefly in this paper. Then we simulate the output characteristics of p-GaAs solar cell, e.g. the short circuit current I(sc), and the open circuit voltage V(oc), by 1MeV electron radiation with the two-dimensional device simulation software - MEDICI. The simulation results are perfectly agreement with the experimental data.
【关键词】 GaAs;
太阳电池;
辐射效应;
MEDICI;
模拟;
【Key words】 GaAs; solar cell; radiation effects; MEDICI simulation;
【Key words】 GaAs; solar cell; radiation effects; MEDICI simulation;
- 【文献出处】 核电子学与探测技术 ,Nuclear Electronics & Detection Technology , 编辑部邮箱 ,2005年01期
- 【分类号】TM914
- 【被引频次】6
- 【下载频次】191