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电子束辐照对氟掺杂二氧化锡导电玻璃的影响

Effect of electron beam irradiation on F-doped SnO2 conducting glass

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【作者】 史成武戴松元王孔嘉隋毅峰方霞琴

【Author】 SHI Cheng-wu~~(1,2), DAI Song-yuan~1, WANG Kong-jia~1, SUI Yi-feng~1, FANG Xia-qin~1 (1. Institute of Plasma Physics, Chinese Academy of Sciences, Hefei 230031, China; 2.School of Chemical Engineering, Hefei University of Technology, Hefei 230009, China)

【机构】 中国科学院等离子体物理研究所中国科学院等离子体物理研究所 安徽合肥 230031合肥工业大学化学工程学院安徽合肥 230009安徽合肥 230031安徽合肥 230031

【摘要】 运用XRD分析氟掺杂二氧化锡导电玻璃导电面SnO2的晶型,发现其属于四方晶系,晶粒尺寸为32.35nm。运用XPS分析氟掺杂二氧化锡导电玻璃导电面的元素组成主要是Sn和O,未能检测出F。进一步研究表明,电子束辐照前后Sn所处的化学状态相同(以Sn4+的形式存在),O以2种化学状态存在,分别对应氧充足和氧缺乏状态,且随着电子束辐照注量的增加,会有少量的氧失去而使氧充足状态的O1s逐渐减少。

【Abstract】 The phase of SnO<sub>2 on F-doped SnO2 conducting glass was characterized by X-Ray diffraction technique(XRD), and the results show that the phases of SnO2 belong to the tetragonal system and its average diameter is 32.35 nm.The chemical composition was analyzed by X-ray photoelectron spectroscopy(XPS),and the experiment results indicate that the main compositions of the glass surface are Sn and O and the element F has not been found. It is further found out that Sn exists in the same chemical state of Sn<sup>4+for both unirradiated and irradiated samples,that two types of O can be distinguished by Gaussian fitting,which are corresponding to the oxygen sufficient region and the oxygen deficient region respectively,and that the oxygen sufficient region(O<sub>1s) decreases with the increase of electron beam irradiation flux.

【基金】 国家重点基础研究发展规划资助项目(G2000028200)
  • 【文献出处】 合肥工业大学学报(自然科学版) ,Journal of Hefei University of Technology(Natural Science) , 编辑部邮箱 ,2005年03期
  • 【分类号】TM914
  • 【被引频次】1
  • 【下载频次】230
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