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电子束辐照对氟掺杂二氧化锡导电玻璃的影响
Effect of electron beam irradiation on F-doped SnO2 conducting glass
【摘要】 运用XRD分析氟掺杂二氧化锡导电玻璃导电面SnO2的晶型,发现其属于四方晶系,晶粒尺寸为32.35nm。运用XPS分析氟掺杂二氧化锡导电玻璃导电面的元素组成主要是Sn和O,未能检测出F。进一步研究表明,电子束辐照前后Sn所处的化学状态相同(以Sn4+的形式存在),O以2种化学状态存在,分别对应氧充足和氧缺乏状态,且随着电子束辐照注量的增加,会有少量的氧失去而使氧充足状态的O1s逐渐减少。
【Abstract】 The phase of SnO<sub>2 on F-doped SnO2 conducting glass was characterized by X-Ray diffraction technique(XRD), and the results show that the phases of SnO2 belong to the tetragonal system and its average diameter is 32.35 nm.The chemical composition was analyzed by X-ray photoelectron spectroscopy(XPS),and the experiment results indicate that the main compositions of the glass surface are Sn and O and the element F has not been found. It is further found out that Sn exists in the same chemical state of Sn<sup>4+for both unirradiated and irradiated samples,that two types of O can be distinguished by Gaussian fitting,which are corresponding to the oxygen sufficient region and the oxygen deficient region respectively,and that the oxygen sufficient region(O<sub>1s) decreases with the increase of electron beam irradiation flux.
【Key words】 SnO2; electron beam; X-ray photoelectron spectroscopy(XPS); solar cell;
- 【文献出处】 合肥工业大学学报(自然科学版) ,Journal of Hefei University of Technology(Natural Science) , 编辑部邮箱 ,2005年03期
- 【分类号】TM914
- 【被引频次】1
- 【下载频次】230