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GaSb衬底上外延InAs_xSb_1-x材料的LP-MOCVD研究

The Study of InAs_xSb_1-x on GaSb Substrate Grown by LP-MOCVD

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【Author】 Li Xiaoting~(1,2),Wang Yiding~3,Wang Tao~1,Yin Jingzhi~3,Wang Jinwei~1,Sai Xiaofeng~1,Gao Hongkai~1,Zhang Zhiyong~41 Xi′an Institute of Optics and Precision Mechanism,the Chinese Academy of Science,Xi′an 7100682 School of Science,Chang′an University,Xi′an 7100613 Department of electronics engineering,Jilin University,Changchun 1300234 Department of electronics Courses,Northwest University,Xi′an 710069

【机构】中国科学院西安光学精密机械研究所光电子学室；吉林大学电子工程学院；西北大学电子工程系西安710068；长安大学理学院；西安710061；长春130023；西安710068；西安710069；

【摘要】采用自制的低压金属有机化学汽相淀积LP-MOCVD设备,在(100)面GaSb单晶衬底上外延生长了InAsSb材料.用X射线双晶衍射、光学显微镜和扫描电镜、电子探针能谱仪等对材料特性进行了表征,分析研究了生长温度、Ⅴ/Ⅲ比、过渡层等对外延层的影响.并且获得了与GaSb衬底晶格失配度较低的表面光亮的晶体质量较好的InAsSb外延层.更多还原

【Abstract】 InAsSb epitaxy had been obtained on(100) GaSb substrate by a home-made low pressure MOCVD system.The characteristic of InAsSb epitaxy was investigated by means of x-ray diffraction technique,optical microscopy and scanning electron microscopy(SEM),and electron microprobe analysis(SEM).And the dependence of surface morphology and solid composition of epitaxy on growth temperature,Ⅴ/Ⅲ ratio and buffer layer is studied.High quality mirror-like surfaces with a minimum lattice mismatch was obtained.更多还原