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B~+注入HgCdTe外延材料的红外透射光谱分析

Infrared Transmission Spectroscopy of B~+ implanted HgCdTe Epilayers

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【作者】 王庆学魏彦锋朱建妹杨建荣何力

【Author】 Wang Qingxue, Wei Yanfeng, Zhu Jianmei, Yang Jianrong, He Li Research Center for Advanced Materials and Devices, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, Shanghai 200083

【机构】 中国科学院上海技术物理研究所半导体材料与器件研究中心中国科学院上海技术物理研究所半导体材料与器件研究中心 上海200083上海200083上海200083

【摘要】 运用多层模型和膜系传递矩阵以及非线性二乘法,模拟了B+注入碲镉汞外延材料的红外透射光谱,结果表明B+注入碲镉汞外延材料的红外透射光谱能够很好地理论再现,并由此获得了结区的自由载流子浓度分布、迁移率、面自由载流子浓度以及折射率和消光系数等相关参量,所得结果与微分Hall法测试的结果是一致的.计算结果也表明B+注入HgCdTe导致红外透射率变化的根本原因是注入层的高载流子浓度的等离子效应改变了该层的折射率和消光系数.

【Abstract】 The calculation method of infrared transmission spectroscopy of boron-implanted HgCdTe epilayers was proposed based on multilayer model, transfer matrix and nonlinear least squares method. The results show that the transmission spectra of HgCdTe epilayers can be fitted very well by the theoretical calculation curves. By fitting, the carrier concentration, the mobility, the sheet carrier concentration, the refractive index and the extinction coefficient in B+ implanted zone are obtained. These parameters are consistent with those obtained from different Hall measurement before. The effect of B+ implantation on the transmission spectra of HgCdTe epilayers mainly comes from the changes of the refractive index and the extinction coefficient of HgCeTe material in B+ implanted zone.

【基金】 国家自然科学基金委创新研究群体科学基金(60221502)资助
  • 【文献出处】 光子学报 ,Acta Photonica Sinica , 编辑部邮箱 ,2005年08期
  • 【分类号】TN21
  • 【被引频次】14
  • 【下载频次】152
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